Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction

Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction

… Download …


Part of #Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction# :

Publishing year : 2013

Conference : 21st Iranian Conference on Electrical Engineering

Number of pages : 4

Abstract: A complete optical-electric-gain-thermal self-consistent model of 1.55 m AlGaInAs Photonic Crystal Vertical Cavity Surface Emitting Diode Lasers (PhC VCSELs) has been applied to optimize its threshold characteristics. It shows that for 5 m devices, the theroom temperature (RT) threshold current is equal to only 0.59 mA and the maximum operating temperature is equal to as much as 380 K. The results suggest that the 5 m AlGaInAs PhC VCSELs seem to be the most optimal ones For light sources in high performance optical communication systems.