New Design 1-Bit Full Adder Using GDI and MOSCAP

New Design 1-Bit Full Adder Using GDI and MOSCAP

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Part of #New Design 1-Bit Full Adder Using GDI and MOSCAP# :

Publishing year : 2012

Conference : First National Conference on Electrical Engineering in Isfahan

Number of pages : 5

Abstract: In this paper, we present a new 1-bit full adder cell design with two separate parts, one of which is GDI block andother is the majority block, which leads to a reduced power-delay product (PDP). All of the capacitors in this paper are replaced by MOSCAP. The new adder cell is simulated at the tsmc 0.18 um coms technology. Using HSPICE and compared with other energy-efficient full-adders reported recently