A Numerical Study on Base Geometry of Transistor Laser: Quantum-Well Location Effect

A Numerical Study on Base Geometry of Transistor Laser: Quantum-Well Location Effect

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Part of #A Numerical Study on Base Geometry of Transistor Laser: Quantum-Well Location Effect# :

Publishing year : 2011

Conference : 19th Iranian Conference on Electrical Engineering

Number of pages : 4

Abstract: We simulate a quantum-well dislocation effect in a base region of a 150m cavity length transistor laser. Using a special calculation method, the base recombination lifetime is simulated for different quantumwell locations. In order to investigate the optical bandwidth dependence, quantum well location coupled carrier photon equations are analyzed. Simulation shows significant enhancement in optical bandwidth (up to ~ 51GHz) due to moving the quantum well towards the collector while current gain decreases. Also reported in this work is the optimum place for quantum-well to locate in the base region in order to maximize the bandwidth.